3B Scientific, UE6020200-115, Experiment for Solid State Physics: Hall-Effect in Semiconductors, 115 V, 50/60 Hz, Basic Equipment
UE6020200-115 Includes Only:
- Basic Hall Effect Apparatus
- N-Doped Germanium on Printed Circuit Board
- P-Doped Germanium on Printed Circuit Board
- U Core D
- Coil D with 600 Turns - 2 pcs
- Pair of Pole Shoes and Clamping Brackets D for Hall Effect
- Transformer with Rectifier 3/6/9/12 V, 3 A (115 V, 50/60 Hz)
- DC Power Supply 20 V, 5 A (115 V, 50/60 Hz)
- Digital Multimeter P3340
- Set of 15 Safety Experiment Leads, 75 cm
- Magnetic Field Sensor FW ± 2000 mT
- VinciLab
- Differential Voltage Sensor, 10 V - 2 pcs
- Voltage Sensor, 500 mV, Differential
- Sensor Cable - 4 pcs
Features:
The Hall effect occurs in electrically conductive materials located in a magnetic field B. The Hall voltage's sign changes depending on whether the same current I is borne by positive or negative charge carriers. Its value depends on the charge carrier density. The Hall effect is consequently an important means of determining the mechanisms of charge transport in doped semiconductors. In this experiment, doped germanium crystals are examined at temperatures between 300 K and 450 K to ascertain the differences between electrical conduction enabled by doping, and intrinsic conduction enabled by thermal activation of electrons causing their transfer from the valence band into the conduction band.
Note: Coach 7 license required!