3B Scientific, UE3080300-115, Experiment for Electricity: Field Effect Transistors, 115 V, 50/60 Hz
UE3080300-115 Includes Only:
- Plug-in Board for Components
- Set of 10 Jumpers
- Linear Resistor, 1 kOhm
- Linear Resistor, 47 kOhm
- Linear Resistor, 470 kOhm
- Electrolytic Capacitor 470 µF
- FET Transistor, BF 244, P4W50
- Semiconductor Diodes, Si, 1000 V
- Potentiometer 220 Ohm, 3 W, P4W50
- Analogue Multimeter ESCOLA 30
- Set of 15 Experiment Leads, 75 cm 1 mm2;
- AC/DC Power Supply 0 − 12 V, 3 A (115 V, 50/60 Hz)
Features:
A field effect transistor (FET) is a semiconductor component in which electric current passes through a channel and is controlled by an electric field acting perpendicular to the channel. FETs have three contacts, called source, drain and gate due to their respective functions. If a voltage is applied between the source and the drain, then a drain current flows between the two. For small voltages between the drain and source, an FET acts like a simple ohmic resistor with a correspondingly linear characteristic. As the source-drain voltage increases, the channel becomes restricted and eventually is cut off entirely. The characteristic then enters an area of saturation. When the gate voltage is non-zero, the saturation value of the drain current decreases.
For more information, please see Data Sheet